| № |
Название компонента |
Описание |
Производитель |
| 1 |
BF1012 |
Silicon N-channel MOSFET tetrode |
Infineon (formely Siemens) |
| 2 |
BF1012S |
Silicon N-channel MOSFET tetrode |
Infineon (formely Siemens) |
| 3 |
BF1012W |
Silicon N-channel MOSFET tetrode |
Infineon (formely Siemens) |
| 4 |
IRF1010E |
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. |
International Rectifier |
| 5 |
IRF1010EL |
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. |
International Rectifier |
| 6 |
IRF1010ES |
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. |
International Rectifier |
| 7 |
IRF1010N |
HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. |
International Rectifier |
| 8 |
IRF1010NL |
HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. |
International Rectifier |
| 9 |
IRF1010NS |
HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. |
International Rectifier |
| 10 |
SN74F1016DW |
16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY |
Texas Instruments |
| 11 |
SN74F1016DWR |
16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY |
Texas Instruments |
| 12 |
UF101 |
Ultrafast switching rectifier. Peak reverse voltage 100 V. Average forward current 1.0 A. |
PAJIT |
| 13 |
UF101 |
100 V, 1 A, ultrafast switching rectifier |
TEL |
| 14 |
UF101 |
100 V, 1 A, ultrafast switching rectifier |
TRSYS |
| 15 |
UF1010 |
Ultrafast switching rectifier. Peak reverse voltage 1000 V. Average forward current 1.0 A. |
PAJIT |
