| № |
Название компонента |
Описание |
Производитель |
| 31 |
DCF101 |
DC/DC converter. 150 W output series. Output voltage 5 VDC; output current 30.0 (27.0) A. Input range 12 V nominal (9-16 VDC). |
IPSI |
| 32 |
DF101 |
50 V, 1 A, bridge rectifier |
LRC |
| 33 |
DF101-S |
50 V, 1 A, bridge rectifier |
LRC |
| 34 |
F1012 |
Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
POFET |
| 35 |
F1014 |
Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
POFET |
| 36 |
F1015 |
Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
POFET |
| 37 |
F1016 |
Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
POFET |
| 38 |
F1018 |
Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
POFET |
| 39 |
F1019 |
Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
POFET |
| 40 |
M28F101-100P1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 100ns Access |
SGS-Thomson Microelectronics |
| 41 |
M28F101-120N1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 120ns Access (TSOP) |
SGS-Thomson Microelectronics |
| 42 |
M28F101-150K1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 150ns Access |
SGS-Thomson Microelectronics |
| 43 |
M28F101-150P1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 150ns Access |
SGS-Thomson Microelectronics |
| 44 |
M28F101-150P6 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 150ns Access |
SGS-Thomson Microelectronics |
| 45 |
MBRF10100CT |
10A, 100V ultra fast recovery rectifier |
MCC |
